h a l f b a k e r yYeah, I wish it made more sense too.
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I think the word is "decoherence". |
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Sounds like Q*bert field dynamics. |
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B] connect the levels for non binary values. |
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Is this not just MLC flash memory? |
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Q*bert is easier to understand than quantum physics. |
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Actually it is different than MLC. With MLC same sized containers hole different numbers of electrons. With this idea, which looks a little like a ziggurat shape, the voltage drives (tunnels) electrons across the barrier, which varies thickness stepwise. So varied voltages represent different bits. |
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Although MLC has similarities the tunneling barrier is not ziggurat shaped. |
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OK. I don't understand tunneling well enough to fully
understand how that'll work, but I see the difference, I
think. |
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Semiconductor fabrication has been traditionally planar rather than 3D. There have only been a few recent attempts to start making memory devices in a 3D fashion.
If you can actually tell Intel and Micron technologies how to accomplish this feat of magic you are proposing, then you will make stupid amounts of money. They have already spent some serious high stakes poker style money to get 3D xpoint to market. |
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A close fitting tunnel is a FIFO. It wouldn't surprise me if
Quantum Mechanics has weirded this out as well. |
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My questioning line is this, does the voltage push one
electron strait to the higher step or push the electron in the
lower step to the higher step first and move to the lower
step? |
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I don't think each cell is meant to be a shift register in
this idea. My understanding of it is that each cell can
only hold one electron, but that electron can be on any
of eight (say) steps in the cell, to represent a number. |
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With all the talk of flash and LEDs , I imagined a tunnel from
the other
side of the this material wall which, on getting through,
the
electron cascades down the steps flinging off photons as it
falls. A sort of cascade LED. Now if the steps were arranged
spacially as a Freznal parabola.... Sorry, just dreaming. |
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